valence ['veɪləns]  ['veɪləns] 

valence 基本解释

名词 (化合)价,原子价; (心理)效价

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valence 网络解释

1. 瓦朗斯:法国国营铁路公司提供从CDG前往多处法国火车站的列车服务,包括 昂热 (Angers)、 阿维尼翁、 波尔多、 勒芒 (Le Mans)、 里尔 (Lille)、 里昂、 马赛、 蒙彼利埃、 南特、 尼姆、 普瓦捷 (Poitiers)、 雷恩 (Rennes)、 图卢兹 (Toulouse)、 图尔、 瓦朗斯 (Valence)等.

2. valence

2. 效价:弗罗姆认为:某一活动对于调动某一人的积极性,激发出人的内部潜力的激励的强度,取决于达成目标后对于满足个人的需要的价值的大小-效价(Valence)与他根据以往的经验进行判断能导致该结果的概率-期望值(Expectancy),

valence 双语例句

1. As a kind of typical alkaline earth atom, Ba atom has a larger atomic core and much more sensitive valence electrons, so, the study on the spectroscopic prosperities of Ba autoionizing states is significant on the understanding of the complicated configuration and the dynamics process inside the atom. On the experimental side, by introducing external electronic fields the Stark autoionizing states of Ba atom are produced.
    Ba原子作为一种典型的碱土金属原子,具有较大的原子实和活泼的价电子,其自电离态的光谱及其在电场下的特性,对人们认识原子的复杂结构和内部动力学过程具有重要的科学意义。

2. The embedded silicon-germanium source and drain with uniaxial compressive strain is applied to pMOSFETs, while the contact etch stop layer with uniaxial tensile strain and strain memory technology are used for nMOSFETs. In chapter 2, the valence band structures in bulk silicon are calculated by using a bond orbital model, which is appropriate for a high energy portion of valence band structures.
    在第二章中,介绍一种用来计算矽价电带结构的键结轨域模型,其因为具有较可靠的高能量价电带结构,可以利用来模拟快闪式记忆元件操作在高压下的之热载子行为。

3. valence

3. Knowledge and skills: understand the core idea of valence shell electron pairs repulsion theory; can use the theory to determine the shapes of some simple molecules.
    知识与技能:理解价电子对互斥理论,能在理论的指导下确定一些小分子的形状。

4. valence

4. The calculated density of states is very consistent with UPS experimental results of ZnO, in detail, the shape、position and band width of the upper-valence band are perfectly consistent with the experimental result; though the Zn3d levels are estimated somewhat high, its shape is consistent with experimental result and shows two subpeak which are four-fold peak and six-fold peak respectivly.
    计算得到的理想ZnO的态密度曲线与光电子能谱的实验结果非常一致:上价带中O2p是主要成分,它的子峰位置及带宽与实验值吻合的非常好;下价带中Zn3d是主要成分,虽然它的位置偏高,但它的谱形与实验曲线非常一致。

5. VARIATION IN L, M, N INNER-SHELL ELECTRON BINDING ENERGIES OF RARE-EARTH ELEMENTS IN VALENCE TRANSITION
    变价稀土元素L,M,N内壳层电子束缚能量的变化

6. Inhibition efficiency of these inh ibitors decrease with the increase of free valence of N atom; Otherwise inhibiti on efficiency increase with the increase of summation of free valence in pyridin e ring.
    这些缓蚀剂随着N原子自由价的增大,缓蚀效率降低;而随着吡啶环自由价之和的增加,缓蚀效率提高。

7. The stimulated emission could be explained by population inversion between the top of the valence band and the trap states.
    标 签 受激辐射多孔硅量子点陷阱态 stimulated emission porous silicon quantum dots trap states

8. It was no common swarthiness which constituted the sole point of resemblance, both as regards Valence and Madame Deluc
    伐仑士和德吕克太太两个人能够同时都记起这一点,那就决不是一般的黝黑了。

9. On the basis of the interaction mechanism of photon and substance, three factors which affect photon absorption efficiency are considered, including the electron density between absorption atoms, the number of inner orbital energy level, and the distribution of valence electrons in the absorption materials. According to the effect of irradiation to polymer microstructure, it is proposed that aromatic compounds or aromatic radicals, for example, benzene, not only have the stability of irradiation but also the ability of dispersing the energy of incident photon.
    从光子与物质相互作用的机理出发,提出了影响光子吸收效率的因素:即吸收材料内吸收原子核间电子密度、内轨道能级大小和能级数量、价层电子的分布是制约材料吸收效率的三个主要因素;依据辐照对高分子材料微观结构的影响,提出了苯环等芳香族化合物或基团不仅其自身辐照时较稳定,且对入射光子能量具有弥散作用。

10. This is a chemical bond that results from the sharing of valence electrons between atoms.
    这是一种共用原子间的价电子而形成的化学键。

11. valence是什么意思

11. In the valence bond treatment, explicit recourse is made to classical, localized bond structure.
      价键法明显依赖经典的定域结构。

12. Introduces valence electron structures of solid phase in Ti-Al phase diagram, calculates solubility of interstitial elements.
      阐述Ti-Al相图固相的价电子结构,计算了间隙元素的溶解度。

13. Herman and S. Skillman with Hartree method. inspected, sysetmatically the change of energy at atomic Valence Orbital from helium to lawrencium.
      Skillman用Hartree方法计算得到的原子轨道能的数据(1963)为依据,系统地考察了从氦到铹原子的价层轨道能量变化情况,进而探讨了原子轨道的钻穿作用问题。

14. valence什么意思

14. The author has also made a detailed explanation on the relation-ship between the ESR parameters and thermal evolution of kerogen and the differential N of different types of kerogen based on the microcomponent and structural model of Kerogen, mechanism of free radical formation and theories of molecular valence-bond of organic chemistry.
      根据干酪根的显微组成、结构模式及自由基形成机理,结合有机化学的分子价键理论,深入解释了ESR参数随干酪根热演化的关系及不同类型有机质中自由基浓度的差别。g值随有机质演化的关系比较复杂,随埋深增加而缓慢增大,到一定深度后减小;作者利用干酪根自由基中电子的自旋-自旋相互作用和自旋-晶格相互作用的关系,解释了ΔH随有机质成熟度增加而增大及干酪根的不同处理方法导致ESR参数有所不同的原因;不同类型的有机质由于其结构和组成的差异,自由基的行为有所不同。

15. The controlled synthetic approach through precise manipulation of the reaction conditions in the two mixed-valence copper imidazolate coordination polymers, as well as metallophilicity and C-H…πinteractions in heteronuclear metal imidazolates have been discussed.
      在四个混金属咪唑配合物中存在亲金属作用和C-H…π相互作用,后者对较强的亲银作用不能产生影响,而限制了一价铜之间的进一步靠近。

16. On the one hand, the charge transfer between the complexes and the valence band is very fast, but the liberation of iodine, I〓, may be rather slow due to the interaction and/or the formation of complexes between donating electron species and the accessible Fe sites at the surface. Therefore, minority carriers (photo-induced holes) tend to accumulate in the FeS〓/electrolyte interface causing the flatband potential shift towards positive energy and the decrease of the maximum theoretical photovoltage. On the other hand, the occurrence of unoccupied surface states in the forbidden zone due to the strong chemical interaction of iodine with FeS〓 surface leads to the increase of both surface recombination dark current and tunneling dark current causing the decrease of open circuit photovoltage. The self-assembled monolayer of n-octadecylamine.
      FeS〓/电解质界面化学行为理论模拟与太阳电池开路电压的理论分析表明:碘离子I〓与FeS〓(100)表面产生强烈化学吸附作用,H〓O分子与FeS〓(100)为物理吸附,因此I〓/I〓电解质可以强烈抑制FeS〓电极光腐蚀;同时,与弱相互作用体系相比,强相互作用体系的界面电子传递隧道距离缩短而使光电流增加,提高了量子效率;I〓分子吸附一方面阻碍了溶液中的I〓在FeS〓电极表面的吸附,导致光生空穴在表面发生积累,最终的结果是FeS〓电极平带电势ψ〓正向漂移,致使理论最大光电压降低,另一方面,由于I〓吸附导致带隙处未占表面态增多,表面复合电流与隧道电流明显增大,从而使光开路电压U〓降低。

17. The structures of conductionband and valence band are analogous to the results of ultraviolet photoemissionspectra and are also consistent with the model of Travaglini et al, but the gap be-tween conduction and valence band is insignificant.
      所得到的导带和价带的结构与紫外光电子能谱的结果相类似,并且基本上符合Travaglini等人所提出的分子轨道模型,但导带与价带之间的能隙不明显。

18. valence什么意思

18. It utilizes its four valence electrons completely in the establishment of four covalence, its valence shell becomes saturated.
      碳原子能够利用其全部四个价电子构成共价键,并形成稳定的饱和价电子层。

19. In this project, the calculated formulas and programs of the spin-Hamiltonian parameters (g and A factors, zero-field splitting) for transition metal ions in crystals (i. e., 3d2 and 3d7 ions in a tetrahedral site with cubic, trigonal or tetragonal symmetry, and 3d3 and 3d8 ions in a cubic octahedral site) are established from a two-mechanism model, in which not only the contribution due to the crystal-field mechanism, but also the contribution due to the charge-transfer mechanism (which is neglected in the previous papers) are included. From there formulas, the observed spin-Hamiltonian parameters in functional materials and compound semiconductors are calculated. It is found that the relative importance of charge-transfer mechanism increases with the increasing atomic number of ligand (e. g., for Co2 in GaP, InP and GaAs) or with the increasing valence state of 3dn ion (e. g., for Cr4, Mn5 and Fe63d2 ion series in oxygen tetrahedra). So, in these cases, the contributions of charge-transfer mechanism to spin-Hamiltonian parameters can not be neglected and the two-mechanism model should be used.
      有鉴于此,本项目对固体中基态为轨道单态的过渡金属离子(具体为3d2和3d7离子在立方、三角和四角对称的四面体,3d3和3d8离子在立方八面体),建立了一套既包含晶场机制,又包括以前忽略的荷移机制的能处理自旋哈密顿参量g,A因子和零场分裂的双机制理论模型,计算公式和相应的计算程序,用以解释过渡金属离子在各种功能材料和化合物半导体中的自旋哈密顿参量实验数据,发现荷移机制对自旋哈密顿量的贡献随配体原子序数(如对Co2 在GaP,InP和GaAs)或过渡金属离子价态(如对等电子的3d2离子Cr4 ,Mn5 和Fe6 在氧四面体)的增加而增加;在这些情况,荷移机制的贡献必须考虑。

20. Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
      空穴 -和正电荷类似,是由缺少价电子引起的。

valence 英英释义

noun

1. (chemistry) a property of atoms or radicals
    their combining power given in terms of the number of hydrogen atoms (or the equivalent)

    Synonym: valency

2. (biology) a relative capacity to unite or react or interact as with antigens or a biological substrate

    Synonym: valency

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